| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device for reading management data at a high-speed. <P>SOLUTION: The nonvolatile semiconductor storage device includes: two-dimensional memory cells storing two or more bits; and a reading means reading data stored in the memory cell. In one bit of data formed of two or more bits stored in the memory cell, the logic of stored data is fixed by reading at one threshold voltage. In the other bits of the data formed of two or more bits stored in the memory cell, the logic of stored data is fixed by reading at two or more threshold voltages. The management data managed by the controller controlling the nonvolatile semiconductor storage device 1 is stored in the bit of the memory cell in which the logic of the stored data is fixed by the reading at the one threshold voltage. The reading means reads the data of the other bits after reading the management data of the bit of the memory cell in which the logic of the stored data is fixed by the reading at the one threshold voltage. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
