SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in manufacture of SJ-MOSFET by trench filling epitaxial technique, which does not isolate a p-column from a n-type source on a n-column without degrading on-resistance because of a drive diffusion in a n-type source region. SOLUTION: In the method of manufacturing the semiconductor device, when six surfaces of a p-n column are exposed by etching back a p-type epitaxial layer 5 buried in a deep trench 4 having a high-aspect ratio, a surface of the p-type epitaxial layer 5 is etched so as to be lower in level than a surface of a n-type epitaxial layer 2 by isotorpic etching. COPYRIGHT: (C)2011,JPO&INPIT