| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a MOS type image sensor capable of reducing a driving voltage. <P>SOLUTION: The MOS type image sensor 100 includes a plurality of pixel parts 21. The pixel parts 21 includes a photoelectric conversion part PD wherein electric charges corresponding to incident light is generated and accumulated, a writing-in transistor WT and a reading-out transistor RT, and an element separation region 211. The writing-in transistor WT includes a floating gate FG, and accumulates the electric charges accumulated in the photoelectric conversion part PD in the floating gate FG, and further has a two-terminal structure of a source connected to the photoelectric conversion part PD and a writing-in control gate WCG. The writing-in control gate WCG is arranged at least at a position facing a side surface of the floating gate FG and above the element separation region 211. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
