发明名称 |
SUBSTRATE SYMMETRICAL SILICIDE SOURCE/DRAIN SURROUNDING GATE TRANSISTOR |
摘要 |
Field effect transistors described herein include first and second terminals vertically separated by a channel region. The first and second terminals comprise first and second silicide elements respectively. The first silicide element prevents the migration of carriers from the first terminal into the underlying semiconductor body or adjacent devices which can activate parasitic devices. The first silicide element is also capable of acting as a low resistance conductive line for interconnecting devices or elements. The second silicide element provides a low resistance contact between the second terminal and overlying elements.
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申请公布号 |
US2011068418(A1) |
申请公布日期 |
2011.03.24 |
申请号 |
US20090565625 |
申请日期 |
2009.09.23 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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