发明名称 TEARING-PROOF METHOD FOR WRITING DATA IN A NONVOLATILE MEMORY
摘要 A method for writing and reading data in memory cells, comprising, when writing a data in a block of a first memory zone, a step consisting of writing in a second memory zone a temporary information structure metadata comprising a start flag, an identifier of the temporary information structure, an information about the location of the block in the first memory zone, and a final flag, and, after a power on of the first memory zone, searching for an anomaly in temporary information structures present in the second memory zone.
申请公布号 US2011072300(A1) 申请公布日期 2011.03.24
申请号 US20100887313 申请日期 2010.09.21
申请人 STMICROELECTRONICS (ROUSSET) SAS 发明人 ROUSSEAU HUBERT
分类号 G06F12/00;G06F11/14;G06F11/16 主分类号 G06F12/00
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