发明名称 |
SEMICONDUCTOR DEVICE, POWER CIRCUIT, AND MANUFACTURING MKETHOD OF SEMICONDUCTOR DEVICE |
摘要 |
The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.
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申请公布号 |
US2011068852(A1) |
申请公布日期 |
2011.03.24 |
申请号 |
US20100888064 |
申请日期 |
2010.09.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKAHASHI KEI;ITO YOSHIAKI |
分类号 |
G05F1/10;H01L21/20;H01L29/26 |
主分类号 |
G05F1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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