| 摘要 |
<p>The present invention relates to a semiconductor light-emitting device. The semiconductor light-emitting device comprises: a substrate; an n-type semiconductor layer for providing electrons when voltage is applied thereto; a p-type semiconductor layer for providing electron holes when voltage is applied thereto; a conductive n-type electrode for applying voltage to the n-type semiconductor layer; a conductive p-type electrode for applying voltage to the p-type semiconductor layer; an active layer which is interposed between the n-type semiconductor layer and the p-type semiconductor layer, and which has a quantum well structure for activating electron-hole combination; and a current-spreading and hole injection layer which is interposed between the p-type semiconductor layer and the p-type electrode, and in which both an n-type impurity and a p-type impurity are doped together for current-spreading and hole injection between the p-type electrode and the p-type semiconductor layer. Consequently, the semiconductor light-emitting device of the present invention is advantageous in that it not only reduces contact resistance between an electrode and a semiconductor layer, improving current flow and rendering current-spreading further uniform, but also improves hole injection performance, thereby achieving the maximized efficiency of the device.</p> |
