PLASMA PROCESSING APPARATUS

摘要

PURPOSE: A plasma processing apparatus is provided to form a uniform thin film on a substrate by uniformizing the density of plasma generated between plasma reaction spaces of a chamber. CONSTITUTION: A substrate support unit is installed in a chamber and supports a substrate. A top electrode(140) is installed in the chamber to face the substrate support unit. High frequency power and process gas are supplied to the top electrode. A ground plate(160) is installed on the upper side of the top electrode to be electrically grounded. A plurality of reactance units(190) are electrically connected between the edges of the top electrode and the ground plate and increase the distribution of currents applied to each edge of the top electrode.