| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric converter having high efficiency of photoelectric conversion by suppressing optical absorption in a short-wavelength region of visible light. <P>SOLUTION: The method of manufacturing the photoelectric converter 100 is configured such that in at least one step of a step of forming a substrate-side transparent electrode layer 2 on a substrate 1, a step of forming an intermediate contact 5 layer between adjacent two battery layers 91 and 92, and a step of forming a backside transparent electrode layer 6 on a photoelectric converter layer 3, as the substrate-side transparent electrode layer 2, the intermediate contact layer 5 and the backside transparent electrode layer 6, the transparent conductive film, which is doped with Ga and contains ZnO as a main component, is so formed by controlling N<SB>2</SB>gas partial pressure that ratio of the N<SB>2</SB>gas partial pressure to inert gas partial pressure per unit film thickness of the transparent conductive film becomes a predetermined value or below. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
