CONTACT PLUG, WIRING, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING CONTACT PLUG

摘要

PROBLEM TO BE SOLVED: To form a contact plug using Cu that has small specific resistance and provides small contact resistance with satisfactorily stably suppressing diffusion of Cu atoms to a metal silicide film even when it is a thin film. SOLUTION: The contact plug 100 includes: a metal silicide film 103 formed in a contact hole 105 on the bottom of the contact hole 105 made in an insulating film 104 of a semiconductor device; a manganese oxide film 106 formed in the contact hole 105 on the metal silicide film 103; and a copper plug layer 107 formed on the manganese oxide film 106 so as to fill the contact hole 105. The manganese oxide film is an amorphous film. COPYRIGHT: (C)2011,JPO&INPIT