| 摘要 |
PROBLEM TO BE SOLVED: To obtain a facet protection film which withstands a high-power laser operation over a long period of time by suppressing an increase in current associated with a decrease in COD (Catastrophic Optical Damage) optical output over time due to facet deterioration during the operation. SOLUTION: A nitride semiconductor light-emitting device includes a laminate structure 40 formed of a plurality of nitride semiconductor layers including a light-emitting layer, and having cavity facets 30 facing each other, a first protection film 31 made of AlN, formed over a light-emitting facet of the cavity facets, and a second protection film 32 made of Al<SB>2</SB>O<SB>3</SB>having a refractive index of n1, formed thereon. The second protection film has a crystallized surface at least in a region facing a light-emitting region on the cavity facets; the thickness (t) of the second protection film satisfiesλ/(2n1)<t<3λ/(4n1) (whereλis a wavelength of the output light); and a second reflectance R(n2) (where n2 is a refractive index of crystallized Al<SB>2</SB>O<SB>3</SB>) of the light-emitting region in the cavity facets is lower than a first reflectance R(n1) of a region surrounding the light-emitting region in the cavity facets. COPYRIGHT: (C)2011,JPO&INPIT
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