| 摘要 |
PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor laser element with a laser resonator, allowing a low-threshold current on a semipolar surface of a supporting base wherein the c-axis of a hexagonal group-III nitride is tilted toward the a-axis. SOLUTION: A first cut surface 27 and a second cut surface 29, which form a laser resonator, intersect with an a-n plane. The group-III nitride semiconductor laser element 11 has a laser waveguide, extending in a direction of a cross line between the a-n plane and the semipolar surface 17a. Therefore, band-to-band transition light emission allowing a low-threshold current can be used. In a laser structural body 13, a first surface 13a is located on the opposite side to a second surface 13b. The first cut surface 27 and the second cut surface 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The cut surfaces 27 and 29 are not formed by dry etching, but are made to differ from conventional cleaved surfaces, such as c-planes, m-planes or a-planes. COPYRIGHT: (C)2011,JPO&INPIT
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