| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device equipped with a capacitor having a desired equivalent oxide thickness (EOT) and leakage current characteristics. SOLUTION: The semiconductor memory device includes a capacitor having a first electrode, a capacitance insulating film and a second electrode. The capacitance insulating film includes a first dielectric film made of a metal oxide crystallized film, a second dielectric film formed on the first dielectric film and made of a nitride-containing amorphous metal oxide and a third dielectric film formed on the second dielectric film and made of a metal oxide crystallized film. COPYRIGHT: (C)2011,JPO&INPIT
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