发明名称 |
METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.
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申请公布号 |
US2011070693(A1) |
申请公布日期 |
2011.03.24 |
申请号 |
US20100888846 |
申请日期 |
2010.09.23 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;MIYANAGA AKIHARU;SAKAKURA MASAYUKI;KOEZUKA JUNICHI;MARUYAMA TETSUNORI;IMOTO YUKI |
分类号 |
H01L21/34;C23C14/34 |
主分类号 |
H01L21/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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