发明名称 |
Phase change memory devices, methods of manufacturing and methods of operating the same |
摘要 |
A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.
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申请公布号 |
US2011068317(A1) |
申请公布日期 |
2011.03.24 |
申请号 |
US20100926444 |
申请日期 |
2010.11.18 |
申请人 |
CHOI HYUK-SOON;HUR JI-HYUN;KANG YOON-HO;LEE HYO-SUG;SHIN JAI-KWANG;OH JAE-JOON |
发明人 |
CHOI HYUK-SOON;HUR JI-HYUN;KANG YOON-HO;LEE HYO-SUG;SHIN JAI-KWANG;OH JAE-JOON |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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