发明名称 COPPER METAL FILM, METHOD FOR PRODUCING SAME, COPPER METAL PATTERN, CONDUCTIVE WIRING LINE USING THE COPPER METAL PATTERN, COPPER METAL BUMP, HEAT CONDUCTION PATH, BONDING MATERIAL, AND LIQUID COMPOSITION
摘要 Disclosed are: a copper metal film which has good adhesion to a substrate, low volume resistivity, and good deep-part metal properties; and a method for producing a copper metal film, wherein the copper metal film can be produced by reducing a substrate to a deep part thereof without damaging the substrate. Specifically disclosed is a copper metal film that is characterized by being obtained by processing a copper-based particle deposited layer, which contains copper oxide as well as a transition metal in the form of a metal, an alloy or a transition metal complex containing a metal element, with a gaseous formic acid and/or formaldehyde that is heated to 120°C or higher. The copper oxide is preferably copper (I) oxide and/or copper (II) oxide. The transition metal, alloy or metal complex are preferably a metal selected from the group consisting of Cu, Pd, Pt, Ni, Ag, Au and Rh, an alloy containing the metal, or a complex containing the metal element, respectively.
申请公布号 WO2011034016(A1) 申请公布日期 2011.03.24
申请号 WO2010JP65698 申请日期 2010.09.13
申请人 HITACHI CHEMICAL COMPANY, LTD.;NAKAKO, HIDEO;YAMAMOTO, KAZUNORI;KUMASHIRO, YASUSHI;YOKOZAWA, SHUNYA;MASUDA, KATSUYUKI;EJIRI, YOSHINORI;INADA, MAKI;KURODA, KYOUKO 发明人 NAKAKO, HIDEO;YAMAMOTO, KAZUNORI;KUMASHIRO, YASUSHI;YOKOZAWA, SHUNYA;MASUDA, KATSUYUKI;EJIRI, YOSHINORI;INADA, MAKI;KURODA, KYOUKO
分类号 C23C20/02;B22F1/02;H01B1/20;H01B5/14;H01B13/00;H05K1/09 主分类号 C23C20/02
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