<p>In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.</p>
申请公布号
WO2011034850(A1)
申请公布日期
2011.03.24
申请号
WO2010US48765
申请日期
2010.09.14
申请人
II-VI INCORPORATED;GUPTA, AVINASH, K.;ZWIEBACK, ILYA;SEMENAS, EDWARD;RENGARAJAN, VARATHARAJAN;GETKIN, MARCUS, L.
发明人
GUPTA, AVINASH, K.;ZWIEBACK, ILYA;SEMENAS, EDWARD;RENGARAJAN, VARATHARAJAN;GETKIN, MARCUS, L.