WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A light emitting diode includes a semiconductor structure (10) comprising a light emitting layer (22) disposed between an n-type region (20) and a p-type region (24), and n- and p-contacts (26,28) disposed on the n- and p-type regions. The light emitting layer is configured to emit light of a first peak wavelength. A wavelength converting material (36) is positioned in a path of light emitted by the light emitting layer. The wavelength converting material is configured to absorb light of the first peak wavelength and emit light of a second peak wavelength. The light emitting diode is configured such that a light emission pattern from the light emitting diode matches a light emission pattern from the wavelength converting material.