<p>Disclosed is a plasma etching apparatus which is capable of uniformly etching the entire surface of a substrate regardless of the kind of the substrate. Specifically disclosed is a plasma etching apparatus (1) which comprises: a processing chamber (11) wherein the outer diameter of an upper chamber (12) is smaller than that of a lower chamber (13) and the upper chamber (12) is arranged on the central part of the upper surface of the lower chamber (13); a grounded plate-like member (14) which is provided on the ceiling surface of the lower chamber (13) so as to divide the inner space of the processing chamber (11) and has a plurality of through holes (14a) that penetrate the plate-like member (14) from the front surface to the back surface; a base (16) which is provided within the lower chamber (13) and on which a substrate (K) is placed; a gas supply device (20) which supplies an etching gas into the upper chamber (12); plasma generation devices (26, 29) which respectively transform the etching gas within the upper chamber (12) and the lower chamber (13) into plasma; an evacuation device (35) which reduces the pressure within the processing chamber (11); and a high-frequency power supply (32) which supplies high-frequency power to the base (16).</p>
