NITRIDE-BASED SEMICONDUCTOR ELEMENT, AND METHOD OF FABRICATING NITRIDE-BASED SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor element capable of reducing an offset voltage on an interface between a semiconductor layer on a gallium oxide substrate and a principal surface of the gallium oxide substrate.

SOLUTION: A group-III nitride crystal layer 15 covers the principal surface 13a of the gallium nitride substrate 13. The group-III nitride crystal layer 15 comprises a group-III nitride containing aluminum as a group-III constituent element and also containing at least two kinds of constituent elements other than aluminum. A semiconductor laminate 17 includes a gallium nitride semiconductor layer 25. A first electrode 19 is provided on a principal surface 17a of the semiconductor laminate 17. A second electrode 21 is provided on a reverse surface 13b of the gallium nitride substrate 13. A band gap E(15) of the group-III nitride crystal layer 15 is larger than a band gap E(GaN) of the gallium nitride semiconductor layer. The band gap E(15) of the group-III nitride crystal layer 15 is smaller than 4.8 eV (electronvolt).

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