发明名称 DRY ETCHING METHOD FOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide the dry etching method of a substrate efficiently and stably achieving micro-fine working to a substrate made of hard and brittle materials with high hardness and brittleness such as a crystal substrate. SOLUTION: This dry etching method of a substrate comprises the process of: adhering a crystal substrate 8 to a support substrate 7 on which an adhesive film 7b which is dissolvable by wet etching is preliminarily formed on a dissolvable resin substrate 7a by wet etching; placing the crystal substrate 8 in a dry etching device 4 with such an attitude that the working face is turned upward to hold it by electrostatic suction; supplying heat transmission gas for cooling between the substrate placing place and the support substrate; making a plasma generation source generate plasma to etch the working face of the substrate; making a wet etching device 5 dissolve the support substrate 7 to separate and extract only the crystal substrate 8. Thus, the crystal substrate 8 and the support substrate 7 are highly efficiently separated. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011061654(A) 申请公布日期 2011.03.24
申请号 JP20090211388 申请日期 2009.09.14
申请人 PANASONIC CORP 发明人 OKITA SHOGO
分类号 H03H3/02 主分类号 H03H3/02
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