发明名称 POLISHING LIQUID COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a polishing liquid composition capable of reducing residue on a wafer surface and providing superior wettability on the wafer surface, and to provide a manufacturing method of semiconductor substrate using the polishing liquid composition. SOLUTION: The polishing liquid composition contains an abrasive, a hydroxyethyl cellulose and a basic compound. The hydroxyethyl cellulose is prepared by hydrolyzing the hydroxyethyl cellulose whose weight average molecular weight is 0.3-3 million. It is desirable that weight average molecular weight of the hydroxyethyl cellulose prepared by hydrolyzing is 10,000-1,800,000. Further, it is desirable that weight ratio of the abrasive and the hydroxyethyl cellulose in the polishing liquid composition (wt.% of the abrasive/wt.% of the hydroxyethyl cellulose) is 10-10,000. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011061089(A) 申请公布日期 2011.03.24
申请号 JP20090210846 申请日期 2009.09.11
申请人 KAO CORP 发明人 OI TOSHIAKI;KIMURA AKIKATSU;NAKANISHI TSUNEHEI
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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