发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method for fabricating a semiconductor device is provided. A high dielectric constant (high-k) layer and a work function metal layer are formed in sequence on a substrate. A hard mask layer is formed on the work function metal layer, where the material of the hard mask layer is lanthanum oxide. The work function metal layer is patterned by using the hard mask layer as a mask. The hard mask layer is then removed. Afterwards, a gate structure is formed on the substrate.
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申请公布号 |
US2011070702(A1) |
申请公布日期 |
2011.03.24 |
申请号 |
US20090563388 |
申请日期 |
2009.09.21 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHIEN CHIN-CHENG;LIN CHUN-HSIEN;YEH CHIU-HSIEN |
分类号 |
H01L21/8238;H01L21/28 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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