| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a silicon single crystal having reduced dislocation density and a crystal axis orientation of [110] by a CZ method. SOLUTION: The method for growing a silicon single crystal comprises: storing a silicon melt in a quartz crucible accommodated in a chamber; and growing a silicon single crystal including at least a neck part, a shoulder part and a straight body part at the lower end of a seed crystal and having a crystal axis orientation of [110] by immersing the seed crystal in the silicon melt and pulling the seed crystal while rotating it. In the method, after forming a first neck part by performing a necking operation for reducing the seed crystal diameter by pulling the seed crystal immersed in the silicon melt upward, the shape of the solid-liquid interface where the first neck part is brought into contact with the silicon melt is changed into a downwardly projecting shape and then, a second neck part is formed by again performing a necking operation before forming the shoulder part. COPYRIGHT: (C)2011,JPO&INPIT
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