发明名称 SILICON DIE FLOORPLAN WITH APPLICATION TO HIGH-VOLTAGE FIELD EFFECT TRANSISTORS
摘要 A floorplan for a die having three high-voltage transistors for power applications is described. The three high-voltage transistors are specifically placed in relation to each other to optimize operation.
申请公布号 US2011068410(A1) 申请公布日期 2011.03.24
申请号 US20100750248 申请日期 2010.03.30
申请人 GARNETT MARTIN E;HSING MICHAEL R 发明人 GARNETT MARTIN E.;HSING MICHAEL R.
分类号 H01L27/06 主分类号 H01L27/06
代理机构 代理人
主权项
地址