PLASMA PROCESSING APPARATUS AND GAS SUPPLY MECHANISM FOR PLASMA PROCESSING APPARATUS

摘要

Disclosed is a plasma processing apparatus (31) equipped with a processing container (32); a gas supply unit for plasma processing (33) that supplies gas for plasma processing within the processing container (32); a holding base (34) that holds a substrate to be processed (W) thereupon; a plasma generation mechanism (39) that generates plasma within the processing container (32); and a gas supply mechanism (61) that comprises a head section (62), which is capable of supplying gas and moving to a first position that is above the holding base (34) and to a second position that differs from the first position, and that adsorbs deposition gas upon the substrate to be processed (W) in a small-volume area that is formed between the head section (62) and the holding base (34) when the head section (62) has been disposed in the first position.