| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photomask blank capable of improving resolution, CD linearity and a through pitch by allowing a cross-section shape of an etching mask film to rise by over-etching without damaging a light shielding film. <P>SOLUTION: A photomask blank 1 used to manufacture a photomask to which ArF exposure light is applied, has a light shielding film 10 and an etching mask film 20 formed in order on a light-transmissive substrate 2. The light shielding film 10 includes a light shielding layer 12 containing at least transition metal silicide and a surface antireflection layer 13 formed on the light shielding layer 12 and including a tantalum compound containing at least one of oxygen and nitrogen, and the etching mask film 20 is composed of a chromium compound containing at least one of oxygen and nitrogen. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
