| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of preventing separation of a current narrowing layer. SOLUTION: A current narrowing layer 18 and a buffer layer 19 are formed in an upper DBR layer 15. The buffer layer 19 is formed in contact with the current narrowing layer 18. The buffer layer 19 is formed by oxidizing an oxidized layer 19D (not shown) formed with a material and thickness which increase oxidation speed relative to the upper DBR layer 15 and a lower DBR layer 11, and decrease the oxidation speed relative to an oxidized layer 18D (not shown). The thickness d<SB>1</SB>of the buffer layer 19 is set ≥10 nm, which is a value allowing oxidizing species remaining in the current narrowing layer 18 to be sufficiently introduced therein. COPYRIGHT: (C)2011,JPO&INPIT |
