| 摘要 |
A semiconductor device may include, but is not limited to: a first insulating film; first and second impurity layers on the first insulating film; a semiconductor layer on the first insulating film; a second insulating film covering the semiconductor layer; a first electrode on the second insulating film over the semiconductor layer; and a second electrode on the second insulating film over the semiconductor layer. The first and second impurity layers have a first conductive type. The first impurity layer is separated from the second impurity layer. The semiconductor layer is positioned between the first and second impurity layers. The semiconductor layer has a second conductive type which is different from the first conductive type. The first electrode is electrically insulated from the second electrode. The second electrode at least partially overlaps the first electrode in plan view.
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