| 摘要 |
Disclosed is an integrated circuit device having stacked fin-type field effect transistors (FINFETs) with integrated voltage equalization and a method. A multi-layer fin includes a semiconductor layer, an insulator layer above the semiconductor layer and a high resistance conductor layer above the insulator layer. For each FINFET, a gate is positioned on the sidewalls and top surface of the fin and source/drain regions are within the semiconductor layer on both sides of the gate. Thus, the portion of the semiconductor layer between any two gates contains a source/drain region of one FINFET abutting a source/drain region of another. Conductive straps are positioned on opposing ends of the fin and also between adjacent gates in order to electrically connect the semiconductor layer to the conductor layer. Contacts electrically connect the conductive straps at the opposing ends of the fin to positive and negative supply voltages, respectively.
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