| 摘要 |
A system for beam-induced deposition or etching, in which a charged particle or laser beam can be directed to a work piece within a single vacuum chamber, either normally incident or at an angle. Simultaneously with beam illumination of the work piece, a deposition or etch precursor gas is co-injected or premixed with a purification compound and (optionally) a carrier gas prior to injection into the process chamber. The beam decomposes the deposition precursor gas to deposit a film only in areas illuminated by the beam, or decomposes the etch precursor gas to etch a film only in areas illuminated by the beam. Undesired impurities such as carbon in the deposited film are removed during film growth by interaction with adsorbed species on the work piece surface that are generated by interaction of the beam with adsorbed molecules of the film purification compound. Alternatively, the film purification compound can be used to inhibit oxidation of the material etched by the etch precursor gas. By co-injecting or premixing the deposition or etch precursor gas and film purification compound prior to injection, the deposition or etch process may be optimized with respect to growth/etch rate and achievable material purity.
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