| 摘要 |
A non-volatile semiconductor storage device according to one aspect has a memory cell array, a first wiring, a second wiring, and a control circuit. The control circuit is configured to, at the time of the write operation, control the write operation in each of the memory strings such that a memory cell positioned closer to the second wiring is subject to the write operation earlier, and the write operation sequentially proceeds to farther memory cells. On the other hand, the control circuit is also configured to, at the time of the read operation, apply a higher voltage to gates of unselected memory cells as a selected memory cell is located at a region closer to the first wiring.
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