| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to prevent electrons from being leaked due to a large band gap by forming a control gate using a poly silicon layer with SiC. CONSTITUTION: A device isolation layer is formed on a semiconductor substrate(100). A poly silicon layer is formed on the semiconductor substrate including the device isolation layer. Floating gate patterns(220) are formed on the active area of the semiconductor substrate in parallel to a bit line direction. A first oxide layer, a nitride layer, and a second oxide layer are formed on the semiconductor substrate including the floating gate patterns. A silicon layer doped with carbon is formed on the first oxide layer, the nitride layer, and the second oxide layer.</p> |
