THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor and a method for manufacturing the same are provided to configure a channel layer using a combination of new materials except indium, thereby saving production costs. CONSTITUTION: A source electrode(14a) and a drain electrode(14b) are formed on a substrate(100). A channel layer(13) contacts the source electrode and the drain electrode. The channel layer is formed by pulse laser deposition. A gate insulating film(12) contacts the channel layer, the source electrode, and the drain electrode. A gate electrode(11) contacts the gate insulating film.