INFORMATION STORAGE DEVICE INCLUDING VERTICAL NANO WIRES

摘要

PURPOSE: An information storage device including vertical nano wires is provided to reduce the complexity of a nano wire selector, a domain movement controller or wire/read controller. CONSTITUTION: A memory cell array region(11) comprises a plurality of nanowires. A plurality of nanowires are perpendicularly arranged in the top of a substrate. The nanowire has a plurality of domains storing information. Nanowire selection units(12,13) provides a selection signal which selects one of nanowires. A domain movement controller(14) controls domain movement operation of at least one wire. A write / read controller(15) controls a write operation or a read operation of at least one wire.