| 摘要 |
<p>PURPOSE: A photo-resist composition and a method for manufacturing a photo-resist pattern using the same are provided to obtain a photo-resist pattern with the superior pattern profile and the superior resolution. CONSTITUTION: A photo-resist composition includes a resin and an acid generator. The resin is includes a structural unit obtained from monomer which is represented by chemical formula 1. In the chemical formula 1, R1 is hydrogen or C1-C4 alkyl group. R2 is hydrogen or C1-C4 alkyl group. A1 is single bond, -(CH_2)_m-CO-O-A_2-, or -(CH_2)n-CO-NR_30-A3-. m and n are respectively integer of 1-6. R30 is hydrogen or C1-C4 alkyl group. A2 is a single bond or C1-C3 alkanediyl group. A3 is a single bond or C1-C3 alkanediyl group.</p> |
