| 摘要 |
PURPOSE: A semiconductor device is provided to reduce the occupying area of a circuit while obtaining the required current amount by comprising an island-shaped semiconductor layer which arranges the source, the gate, and the drain in vertical direction. CONSTITUTION: A first gate insulating layer(192) surrounding a first island-shaped semiconductor layer(109) is formed. A first gate electrode(183) surrounding the first gate insulating layer is formed. A second gate insulating layer(192) surrounding the first gate electrode is formed. A first column semiconductor layer(133) surrounding the second gate insulating layer is formed. A first conductivity top high concentration semiconductor layer(149) is formed on the upper part of the first island-shaped semiconductor layer.
|
