发明名称
摘要 <p>&lt;P&gt;PROBLEM TO BE SOLVED: To provide a pattern allocating method and a program thereof for obtaining a pattern allocation without influence on formation of a mask pattern even when a partially defective thin film is formed, also to provide a mask manufacturing method to form a mask pattern including the pattern allocation explained above, and to provide a mask which has been manufactured with the relevant mask manufacturing method. Ž&lt;P&gt;SOLUTION: A region including a failure in formation of a membrane is identified previously as the region inhibiting pattern allocation. A pattern allocation enabling formation of a mask pattern can be obtained by extracting a re-allocation object pattern 44 allocated within the pattern allocation inhibiting region (step ST3), and then reallocating the same pattern to the other mask region (step ST4) after complementary division and allocation to each mask region of the pattern are completed (step ST1, ST2), even if a region difficult for pattern formation exists in a mask blanks. Ž&lt;P&gt;COPYRIGHT: (C)2006,JPO&NCIPI Ž</p>
申请公布号 JP4657646(B2) 申请公布日期 2011.03.23
申请号 JP20040223635 申请日期 2004.07.30
申请人 发明人
分类号 H01L21/027;G03F1/20 主分类号 H01L21/027
代理机构 代理人
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