| 摘要 |
<p>Provided is a hybrid silicon wafer comprising a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer. Also provided is a method for manufacturing a hybrid silicon wafer having a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer, wherein a part of the sintered polysilicon is hollowed, a single crystal ingot is inserted into the hollowed portion, these are mutually bonded through thermal diffusion bonding based on HIP to prepare a complex of the sintered polysilicon and the single-crystal silicon ingot, and the complex is sliced. Thereby provided are a hybrid silicon wafer comprising functions of both the polysilicon wafer and the single-crystal wafer, and a method for manufacturing such a hybrid silicon wafer.</p> |
