EPITAXIAL WAFER AND ITS MANUFACTURING METHOD

摘要

It is an object of the present invention to provide an epitaxial wafer with fewer pit defects in the epitaxial layer of a silicon monocrystalline wafer that has been doped with arsenic. Pit defects tend to occur when gas etching is performed prior to epitaxial film formation, but this tendency is reversed and a sound epitaxial layer is obtained by setting the crystal plane orientation to (100) and specifying the range of the tilt angle for the angleθin the Ä001Ü direction or Ä001Ü direction or the angle phi in the Ä010Ü direction or Ä010Ü direction with respect to the Ä100Ü axis.