发明名称 |
MASK PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
<p>PURPOSE: A mask pattern forming method and a semiconductor device manufacturing method are provided to improve the etching process accuracy of the target etching layer by etching the target etching layer using the carbon layer having the high selectivity. CONSTITUTION: A second line part having a line width(L2) and a space width(S2) is arranged on the resist pattern(105a). The resist pattern is processed with the trimming in order to form a resist pattern(105b) consisting of the photoresist film(105). A reflection barrier layer(104) is etched with the trimmed resist pattern as the mask. A reflective barrier pattern(104a) having a line width(L3) and a space width(S3) is formed.</p> |
申请公布号 |
KR20110030295(A) |
申请公布日期 |
2011.03.23 |
申请号 |
KR20100072304 |
申请日期 |
2010.07.27 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
NAKAJIMA SHIGERU;HASEBE KAZUHIDE;YAEGASHI HIDETAMI;NISHIMURA EIICHI |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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