| 摘要 |
The arrangement has a layer stack (26) arranged between a conductive chemical lead (22) and a dielectric. An intermediate layer has specific electrical resistance greater than resistance of conductive layers (52), and electrically conducting layers with a layer thickness of 5-60 Angstrom. The layers have a material, and the specific electrical resistance of the layers is smaller than that of the intermediate layers (54). An independent claim is also included for a method for electrolytic deposition of a copper conducting structure. |
