| 发明名称 |
Method for manufacturing a semiconductor device having a III-V nitride semiconductor |
| 摘要 |
A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.
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| 申请公布号 |
US7910464(B2) |
申请公布日期 |
2011.03.22 |
| 申请号 |
US20100695759 |
申请日期 |
2010.01.28 |
| 申请人 |
PANASONIC CORPORATION |
发明人 |
MURATA TOMOHIRO;HIROSE YUTAKA;TANAKA TSUYOSHI;UEMOTO YASUHIRO |
| 分类号 |
H01L21/20;H01L21/28;H01L21/335;H01L21/338;H01L21/36;H01L29/20;H01L29/423;H01L29/778;H01L29/812 |
主分类号 |
H01L21/20 |
| 代理机构 |
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