| 摘要 |
<p>The present invention relates to a method for fabricating a photovoltaic cell, for example a solar cell, comprising a semiconductor substrate having a front side and a back side, which are arranged opposite to each other. An emitter and a back surface field portion are fabricated at the front side and back side, respectively. The method comprises the application of a diffusion source material at the front side of the semiconductor substrate for the formation of the emitter. The diffusion source material comprises first dopant atoms of a type that dopes at least part of the semiconductor substrate n-type or p-type. Applying the diffusion source material is carried out at conditions at which at least a substantial part of the first dopant atoms substantially does not diffuse into at least part of the semiconductor substrate. The method further comprises the application of second dopant atoms, which are of a type opposite to the type of the first dopant atoms, at the back side of the semiconductor substrate for the formation of the back surface field portion. Applying the second dopant atoms at the back side of the semiconductor substrate is carried out at conditions at which at least part of the first dopant atoms and at least part of the second dopant atoms are substantially simultaneously being driven into the front side and back side of the semiconductor substrate to form the emitter and back side surface field portion, respectively. The present invention further relates to a photovoltaic cell that is obtained using such a method.</p> |
