| 发明名称 |
Fuse-type memory cells based on irreversible snapback device |
| 摘要 |
In a programmable circuit making use of fuse cells, a snapback NMOS or NPN transistor or SCR without reversible snapback capability is used as an anti-fuse, and programming comprises biasing the control electrode of the transistor to cause the transistor to go into snapback mode.
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| 申请公布号 |
US7911869(B1) |
申请公布日期 |
2011.03.22 |
| 申请号 |
US20050198688 |
申请日期 |
2005.08.05 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
VASHCHENKO VLADISLAV;HOPPER PETER J.;MIRGORODSKI YURI |
| 分类号 |
G11C17/14;G11C17/08;G11C17/18;H01H37/76;H01H85/00 |
主分类号 |
G11C17/14 |
| 代理机构 |
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代理人 |
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| 主权项 |
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