| 摘要 |
The present invention relates to a method for producing an SOI wafer, having at least a step of a bonding heat treatment for increasing bonding strength by heat-treating a bonded wafer obtained by bonding a base wafer and a bond wafer, in which argon is ion-implanted from a surface of either the base wafer or the bond wafer at a dosage of 1×1015 atoms/cm2 or more at least before the bonding step, the surface ion-implanted with argon is used as a bonding surface in the bonding step, and an increase rate of temperature to a treatment temperature of the bonding heat treatment is 5° C./minute or higher. Thus the present invention provides a method for producing an SOI wafer facilitating the efficient production of an SOI wafer having in the neighborhood of a buried insulator layer thereof a polycrystalline silicon layer uniform in thickness introduced and having high gettering ability toward metal contaminations in the SOI layer by a simple and low-cost method.
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