发明名称 |
Method for creating mask layout data, apparatus for creating mask layout data, and method for manufacturing semiconductor device |
摘要 |
According to mask layout data created for a particular factory facility, transistors constituting a semiconductor device are classified into multiple groups depending on the gate length. Thereafter, the concentration of impurity introduced into a channel layer is set for each group, and thereby the gate length-threshold characteristics of a transistor are controlled. An overlapping area of a gate electrode and an element region of a certain group is extracted from mask layout data. The overlapping area is expanded to determine the shape of a mask used in injecting impurity in a channel layer. The data on the mask shape is then added to the mask layout data.
|
申请公布号 |
US7913195(B2) |
申请公布日期 |
2011.03.22 |
申请号 |
US20080026753 |
申请日期 |
2008.02.06 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
TAKAO YOSHIHIRO |
分类号 |
G06F17/50;G06F19/00;H01L21/00;H01L21/82;H01L21/8234;H01L27/088;H01L29/00 |
主分类号 |
G06F17/50 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|