发明名称 MEMS RF-switch using semiconductor
摘要 A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.
申请公布号 US7911300(B2) 申请公布日期 2011.03.22
申请号 US20100697629 申请日期 2010.02.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG IL-JONG;SHIM DONG-HA;SHIN HYUNG-JAE;KWEON SOON-CHEOL;KIM CHE-HEUNG;LEE SANG-HUN;HONG YOUNG-TACK
分类号 H01H51/22 主分类号 H01H51/22
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