发明名称 |
Semiconductor range-finding element and solid-state imaging device |
摘要 |
A part of a semiconductor layer directly under a light-receiving gate electrode functions as a charge generation region, and electrons generated in the charge generation region are injected into a part of a surface buried region directly above the charge generation region. The surface buried region directly under a first transfer gate electrode functions as a first transfer channel, and the surface buried region directly under a second transfer gate electrode functions as a second transfer channel. Signal charges are alternately transferred to an n-type first floating drain region and a second floating drain region through the first and second floating transfer channels.
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申请公布号 |
US7910964(B2) |
申请公布日期 |
2011.03.22 |
申请号 |
US20060065158 |
申请日期 |
2006.08.30 |
申请人 |
NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY;SHARP KABUSHIKI KAISHA |
发明人 |
KAWAHITO SHOJI;HOMMA MITSURU |
分类号 |
H01L31/062;H01L27/148;H01L29/768;H01L31/113 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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