| 摘要 |
A semiconductor device includes a gate electrode line provided to extend from an N-type area through a device isolation area to a P-type area, and source/drain diffused regions formed in N-type and P-type areas. The gate electrode line includes a first silicide region which configures a P-type MOSFET gate electrode and includes therein a silicide of metal M1, a second silicide region which configures an N-type MOSFET gate electrode and includes therein a silicide of metal M2, and an impurity-doped silicon region which is provided on a device isolation area and includes therein impurities at a higher concentration than both the gate electrodes.
|
